CDST19-G/20-g features -fast switching diode. -surface mount package ideally for automatic insertion. -for general purpose switching applications. -high conductance. mechanical data -case: sot -23 -t erminals: solder plated, solderable per mil- std-750, method 2026. -w eight: 0.008 gram. -marking: CDST19-G jp cdst20-g jr circuit diagram high speed rohs device maximum rating (at t a=25c unless otherwise noted) o c ma v v -65 ~ +150 500 200 t j r ja v rm v r i o junction temperature power dissipation thermal resistance-junction to ambient air dc blocking voltage non-repetitive peak reverse voltage parameter symbol cdst20-g unit t stg a verage rectified output current storage temperature range p d 250 150 mw sot -23 dimensions in inches and (millimeters) 0.066 (1.70) 1 2 3 0.1 19 (3.00) 0.1 10 (2.80) 0.103 (2.60) 0.086 (2.20) 0.020 (0.50) 0.013 (0.35) 0.056 (1.40) 0.047 (1.20) 0.044 (1.10) 0.035 (0.90) 0.083 (2.10) 0.007 (0.20) min 0.006 (0.15) max 0.006 (0.15) 0.002 (0.05) + - CDST19-G 100 100 150 150 o c o c/w o electrical characteristics (at t a =25 c unless otherwise noted) v ua v 50 1 1.25 0.1 t rr v br i r v f junction capacitance reverse recovery time reverse leakage current reverse breakdown voltage parameter symbol min max unit forward voltage c j 5 pf t est conditions 100 150 ns CDST19-G cdst20-g CDST19-G cdst20-g i r =100ua v r =100v v r =150v i f =100ma i f =200ma v r =0v , f=1mh z i f =i r =30ma, irr=0.1 x i r page 1 qw -b0021 rev :a comchip t echnology co., l td. 1 2 3 smd switching diodes
characteristic curves (CDST19-G/20-g) fig.1 - forward characteristics 0.01 0.1 1 10 100 1000 0 1 2 i f , f o r w a r d c u r r e n t ( m a ) v f , forward v oltage (v) o t j =25 c fig.2 - leakage current vs junction t emperature 0.01 0.1 1 10 100 0 i r , l e a k a g e c u r r e n t ( u a ) t j , junction t emperature (c) 100 200 smd switching diodes page 2 qw -b0021 rev :a comchip t echnology co., l td.
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